Storage element

ABSTRACT

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.15/997,868, filed Jun. 5, 2018, which is a continuation of U.S.application Ser. No. 15/141,241, filed Apr. 28, 2016, which is acontinuation of U.S. application Ser. No. 14/429,230, filed Mar. 18,2015, issued as U.S. Pat. No. 9,343,657 on May 17, 2016, which is anational stage of International Application No. PCT/JP2013/004806 filedon Aug. 9, 2013 and claims priority to Japanese Patent Application No.2012-217702 filed on Sep. 28, 2012, the disclosure of which isincorporated herein by reference.

BACKGROUND

The present disclosure relates to a storage element and a storageapparatus that include a plurality of magnetic layers and record datausing spin torque magnetization reversal.

The present disclosure also relates to a magnetic head that detects amagnetic signal from a magnetic recording medium.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2012-217702 filed in theJapan Patent Office on Sep. 28, 2012, the entire content of which ishereby incorporated by reference.

With the rapid development of various information appliances from mobileterminals to large-scale servers, even higher performance, such ashigher integration, higher speed, and reduced power consumption, hasbeen sought for components like memory and logic elements used toconfigure such appliances.

In particular, significant advances have been made in semiconductornonvolatile memory, with flash memory as a large-capacity file memorybecoming increasingly widespread and taking the place of hard diskdrives.

Meanwhile, the development of nonvolatile semiconductor memories is alsoadvancing in order to replace NOR flash memory, DRAM, and the like thatare presently typically used for code storage and for working memory.FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetic Random AccessMemory), and PCRAM (Phase Change RAM) can be given as examples of suchnonvolatile semiconductor memories. Some of these have already beencommercialized.

Out of such nonvolatile memories, MRAM stores data using the directionof magnetization of a magnetic body and is therefore capable ofhigh-speed rewriting and almost infinite rewrites (10¹⁵ times or more).MRAM is already in use in fields such as industrial automation andaircraft.

Due to its high-speed operation and reliability, there are highexpectations on future use of MRAM as code storage and working memory.

However, reducing power consumption and increasing capacity remain asissues for MRAM. These are genuine problems due to the recordingprinciples of MRAM, that is, an arrangement where magnetism is reversedusing a current magnetic field generated from a wire.

As a method of solving the above problem, recording methods (that is,magnetic reversal) that do not rely on a current magnetic field arebeing investigated. Research relating to spin torque magnetizationreversal is particularly active (see, for example, PTL 1, PTL 2, PTL 3,NPL 1, and NPL 2).

In the same way as MRAM, in many cases storage elements that use spintorque magnetization reversal are configured using MTJ (Magnetic TunnelJunctions).

Such configuration uses the torque (also referred to as “spin transfertorque”) applied to a free magnetic layer (whose direction ofmagnetization is not pinned) when spin-polarized electrons, which havepassed a magnetic layer that is pinned in a certain direction, enter thefree magnetic layer, with the free magnetic layer reversing when acurrent of a given threshold or larger flows. Rewriting of 0/1 iscarried out by changing the polarity of the current.

The absolute magnitude of a current for such reversal is 1 mA or belowfor an element of a scale of around 0.1 micrometers. Since such currentmagnitude decreases in proportion to the element volume, scaling is alsopossible. In addition, since word lines for generating a recordingcurrent magnetic field that were necessary with MRAM are unnecessary,there is a further advantage that the cell construction becomessimplified.

Hereinafter, a MRAM that uses spin torque magnetization reversal isreferred to as a STT-MRAM (Spin Torque Transfer-based Magnetic RandomAccess Memory). Note that spin torque magnetization reversal issometimes also referred to as “spin injection magnetization reversal”.

There are great expectations for STT-MRAM as a nonvolatile memorycapable of reduced power consumption and increased capacity whilemaintaining the advantages of MRAM, i.e., high speed and the ability toperform almost infinite rewrites.

When an MTJ construction is applied to the construction of a storageelement as an STT-MRAM, as one example a base layer, pinnedmagnetization layer, intermediate layer (insulating layer), storagelayer, cap layer construction is used.

The merit of applying an MTJ construction is that a large rate of changein magnetoresistance can be ensured, which increases the read signal.

Here, since STT-MRAM is nonvolatile memory, it is necessary to stablystore information written by a current. That is, it is necessary toensure stability with respect to thermal fluctuations in magnetizationof the storage layer (also referred to as “thermal stability”).

If thermal stability of the storage layer is not ensured, there can becases where the reversed direction of magnetization is re-reversed dueto heat (i.e., the temperature in the operating environment), resultingin write errors.

As described above, compared to an existing MRAM, an STT-MRAM storageelement is advantageous for scaling, or in other words, has an advantagein that it is possible to reduce the volume of the storage layer.However, when the volume is reduced, if other characteristics remain thesame, there is a tendency for a drop in thermal stability.

Since the volume of a storage element becomes significantly smaller ifthe capacity of STT-MRAM increases, ensuring thermal stability is animportant issue.

For this reason, thermal stability is an extremely importantcharacteristic for a storage element in an STT-MRAM and it is necessaryto use a design where thermal stability is ensured even when the volumeis reduced.

Here, it is important to note that the current flowing in a storageelement is limited to the magnitude of a current (that is, thesaturation current of a selection transistor) capable of flowing in aselection transistor (i.e., a transistor for selecting a storage elementin which a current is to flow out of the storage elements that constructeach memory cell). In other words, it is necessary to carry out a writeinto a storage element using a current at or below the saturationcurrent of a selection transistor.

Since it is known that the saturation current of a transistor falls asthe transistor is miniaturized, to enable miniaturization of STT-MRAM,there is demand to improve the efficiency of spin transfer so as toreduce the current supplied to a storage element.

Also, if a tunnel insulating layer is used in an intermediate layer asan MTJ structure, to prevent dielectric breakdown of the tunnelinsulating layer, there is a limit on the magnitude of current suppliedto a storage element. In other words, from the viewpoint of maintainingreliability for repeated writes of a storage element also, it isnecessary to suppress the current that is necessary for spin torquemagnetization reversal.

In this way, in an STT-MRAM storage element, there is demand to reducethe reversal current necessary for spin torque magnetization reversal tothe saturation current of a transistor and a current at which breakdownoccurs for an insulation layer (intermediate layer) as a tunnel barrier,or lower.

That is, for an STT-MRAM storage element, there is demand to ensurethermal stability as described earlier and to also reduce the reversalcurrent.

To achieve both a reduction in the reversal current and maintain thermalstability, attention has been focused on a construction that uses aperpendicular magnetization film as a storage layer.

It has been suggested, according to NPL3, for example, that using aperpendicular magnetization film such as a Co/Ni multilayer film in thestorage layer makes it possible both to reduce the reversal current andto ensure thermal stability.

There are a number of types of magnetic material with perpendicularmagnetic anisotropy, such as rare earth-transition metal alloys (such asTbCoFe), metal multilayer films (such as a Co/Pd multilayer film),ordered alloys (such as FePt), and use of interface anisotropy betweenan oxide and a magnetic metal (such as Co/MgO). However, in view of theuse of a tunnel junction construction to realize a high rate of changein magnetoresistance that provides a large read signal in an STT-MRAMand also in view of heat resistance and ease of manufacturing, amaterial that uses interface anisotropy is desirable, that is, aconstruction where a magnetic material including Co or Fe is laminatedon Mg as a tunnel barrier.

Meanwhile, it is also desirable to use a perpendicular magnetizationmagnetic material that has interface magnetic anisotropy in a pinnedmagnetization layer. In particular, to provide a large read signal, itis desirable to laminate a magnetic material including Co or Feimmediately below MgO as a tunnel barrier.

To ensure thermal stability, it is effective to use a so-called“laminated ferri-pinned construction” as the construction of the pinnedmagnetization layer. That is, the pinned magnetization layer is alaminated construction of at least three layers made up of at least twoferromagnetic layers and a non-magnetic layer. Normally, a laminatedferri-pinned construction will often use a laminated constructioncomposed of two ferromagnetic layers and a non-magnetic layer (Ru).

By using a laminated ferri-pinned construction as the pinnedmagnetization layer, it is possible to reduce the bias on the storagelayer due to a magnetic field which leaks from the pinned magnetizationlayer and thereby improve thermal stability.

SUMMARY Technical Problem

Here, as described above, for an STT-MRAM storage element, it isimportant to improve thermal stability in order to reduce the elementsize (and in turn to increase memory capacity).

Ensuring thermal stability also contributes to stable operation of astorage apparatus.

It is desirable to further improve the thermal stability of an STT-MRAMstorage element to enable further miniaturization of a storage element,to promote increases in storage capacity of a storage apparatus, and tostabilize the operation of a storage apparatus.

Solution to Problem

According to a first embodiment of the present technology, there isprovided a storage element including a layered construction including astorage layer that has magnetization perpendicular to a surface of thestorage layer and whose direction of magnetization is changedcorresponding to information, a pinned magnetization layer that hasmagnetization perpendicular to a surface of the pinned magnetizationlayer and serves as a standard for information stored in the storagelayer, and an insulating layer that is composed of a non-magneticmaterial and is provided between the storage layer and the pinnedmagnetization layer. Recording of information in the storage layer iscarried out by changing the direction of magnetization of the storagelayer by injecting spin-polarized electrons in a laminating direction ofthe layered construction, the pinned magnetization layer has a laminatedferri-pinned construction composed of at least two ferromagnetic layersand a non-magnetic layer, a magnetic material in the pinnedmagnetization layer that contacts the insulating layer is configuredusing a CoFeB magnetic layer, a magnetic material in the pinnedmagnetization layer that does not contact the insulating layer is one ofan alloy and a laminated structure using at least one type of each of aPt group metal element and a ferromagnetic 3d transition metal elementthat is a ferromagnetic element out of 3d transition metal elements, andan atomic concentration of the Pt group metal element is lower than anatomic concentration of the ferromagnetic 3d transition metal element.

The present disclosure improves thermal stability by improving thecharacteristics of a pinned magnetization layer using a laminatedferri-pinned construction.

Here, in an STT-MRAM (Spin Torque Transfer based Magnetic Random AccessMemory), to improve thermal stability, the characteristic demanded for apinned magnetization layer that uses a laminated ferri-pinnedconstruction is that the laminated ferri coupling strength is high. As aresult of thorough research by the present inventors, it was establishedthat to improve the laminated ferri coupling strength of a pinnedmagnetization layer in a configuration where a perpendicular magneticanisotropy material as a source of interface magnetic anisotropy isdisposed below an insulating layer as a tunnel barrier, it is effective,in a magnetic material that constructs the pinned magnetization layerand is one of an alloy and a laminated structure using at least one typeof each of a Pt group metal element and a ferromagnetic 3d transitionmetal element, to make the atomic concentration of the Pt group metalelement lower than the ferromagnetic 3d transition metal element.

Accordingly, according to the embodiments of the present disclosuredescribed above, it is possible to increase the laminated ferri couplingstrength of the pinned magnetization layer and to improve thermalstability.

Advantageous Effects of Invention

According to the above embodiments of the present disclosure, it ispossible to further improve the thermal stability of an STT-MRAM storageelement, to further miniaturize a storage element, and to promoteincreases in storage capacity of a storage apparatus. Also, by improvingthermal stability, it is possible to stabilize the operation of astorage apparatus.

According to a magnetic head according to an embodiment of the presentdisclosure that uses the same construction as a storage elementaccording to an embodiment of the present disclosure, it is possible torealize a highly reliable magnetic head with superior thermal stability.

CITATION LIST Patent Literature

PTL 1: JP 2003-17782A

PTL 2: U.S. Pat. No. 6,256,223

PTL 3: JP 2008-227388A

Non Patent Literature

NPL 1: Phys. Rev. B, 54, 9353(1996)

NPL 2: J. Magn. Mat., 159, L1 (1996)

NPL 3: Nature Materials., 5, 210(2006)

NPL 4: Phys. Rev. Lett., 67, 3598(1991)

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic perspective view of a storage apparatus accordingto an embodiment of the present disclosure.

FIG. 2 is a cross-sectional view of a storage apparatus according to theembodiment.

FIG. 3 is a plan view of a storage apparatus according to theembodiment.

FIG. 4 is a view (cross-sectional view) showing an overview of theconfiguration of a storage element according to the embodiment.

FIG. 5 is a view (cross-sectional view) showing the configuration ofsamples used in Experiment 1.

FIG. 6 is a diagram showing Kut (anisotropic energy) found from VSMmeasurement results for the various samples in Experiment 1.

FIG. 7 is a view (cross-sectional view) showing the configuration ofstorage element samples used in Experiment 2.

FIGS. 8A and 8B are diagrams useful in explaining H coupling found fromKerr measurement results for the various samples in Experiment 2.

FIGS. 9A and 9B are diagrams useful in explaining types of MR-Hwaveforms.

FIG. 10 is a view (cross-sectional view) showing the configuration ofstorage element samples used in Experiment 3.

FIG. 11 is a view (cross-sectional view) showing the configuration of astorage element as a modification.

FIGS. 12A and 12B are views showing an example application of thestorage element (magnetoresistance effect element) according to thepresent embodiment to a composite magnetic head.

DETAILED DESCRIPTION

Hereinafter, preferred embodiments of the present disclosure will bedescribed in detail with reference to the appended drawings. Note that,in this specification and the appended drawings, structural elementsthat have substantially the same function and structure are denoted withthe same reference numerals, and repeated explanation of thesestructural elements is omitted.

Embodiments of the present disclosure are described in the orderindicated below.

1. Overall Configuration of Storage Apparatus According to an Embodiment

2. Overview of Storage Element According to the Embodiment

3. Specific Examples and Experimental Results

4. Modifications

1. Overall Configuration of Storage Apparatus According to an Embodiment

First, the overall configuration of a storage apparatus will bedescribed. Schematic diagrams of the storage apparatus are shown inFIGS. 1 to 3. FIG. 1 is a perspective view, FIG. 2 is a cross-sectionalview, and FIG. 3 is a plan view.

As shown in FIG. 1, the storage apparatus according to the presentembodiment has storage elements 3 that use STT-MRAM (Spin TransferTorque-based Magnetic Random Access Memory) capable of holdinginformation in a magnetization state disposed in the vicinity ofintersections of two types of address wires (for example, word lines andbit lines) that are perpendicular to each other.

That is, a drain region 8, a source region 7, and a gate electrode 1,which construct a selection transistor for selecting a storage element3, are formed at parts of a semiconductor substrate 10, such as asilicon substrate, that are separated by an element separating layer 2.Out of such parts, each gate electrode 1 also serves as one address wire(word line) that extends in the front-rear direction in the drawing.

Each drain region 8 is formed so as to be shared by the right and leftselection transistors in FIG. 1, with a wire 9 being connected to suchdrain region 8.

The storage element 3 that has a storage layer whose direction ofmagnetization is reversed according to spin torque magnetizationreversal is disposed between the source region 7 and a bit line 6 thatis disposed above the storage element 3 and extends in the left-rightdirection in FIG. 1. The storage element 3 is configured for exampleusing a magnetic tunnel junction element (MTJ element).

As shown in FIG. 2, the storage element 3 has two magnetic layers 12,14. Out of the two magnetic layers 12, 14, one magnetic layer is set asa pinned magnetization layer 12 whose direction of magnetization M12 ispinned and the other magnetic layer is set as a free magnetism layer,that is, a storage layer 14, whose direction of magnetization M14 isvariable.

The storage element 3 is also connected to the bit line 6 and the sourceregion 7 respectively via upper and lower connect layers 4.

By doing so, a current is supplied via the two types of address wires 1and 6 and caused to flow in the storage element 3 in the up-downdirection (the laminating direction), which makes it possible to reversethe direction of the magnetization M14 of the storage layer 14 accordingto spin torque magnetization reversal.

As shown in FIG. 3, the storage apparatus is configured by disposing astorage element 3 at each intersection of a large number of first wires(word lines) and second wires (bit lines) that are perpendicularly laidout in a matrix.

The storage elements 3 are circular in shape when viewed from above andhave the cross-sectional construction shown in FIG. 2.

As shown in FIG. 2, each storage element 3 includes the pinnedmagnetization layer 12 and the storage layer 14.

Each storage element 3 constructs a memory cell of the storageapparatus.

With this storage apparatus, it is necessary to perform writes with acurrent that is equal to or below the saturation current of theselection transistor. Since it is known that the saturation current of atransistor decreases together with miniaturization, in order tominiaturize the storage apparatus, it would be preferable to increasethe efficiency of the spin transfer and reduce the current flowing inthe storage elements 3.

It is also necessary to ensure a high rate of change inmagnetoresistance to increase the read signal. To do so, it is effectiveto use the MTJ construction described earlier, that is, to use a storageelement 3 configuration where an intermediate layer between the twomagnetic layers 12, 14 is a tunnel insulating layer (tunnel barrierlayer).

If a tunnel insulating layer is used in this way as an intermediatelayer, a limit is imposed on the magnitude of current flowing in thestorage element 3 to prevent dielectric breakdown of the tunnelinsulating layer. That is, also from the viewpoint of ensuringreliability for repeated writes of the storage element 3, it ispreferable to suppress the current necessary for spin torquemagnetization reversal. Note that the current necessary for spin torquemagnetization reversal is also referred to as the “reversal current”,the “storage current”, and the like.

Also, since the storage apparatus according to the present embodiment isa nonvolatile memory, it is necessary to stably store information thathas been written using a current. That is, it is necessary to ensurestability (thermal stability) against thermal fluctuations in themagnetization of the storage layer 14.

If thermal stability of the storage layer 14 is not ensured, there canbe cases where the reversed direction of magnetization is re-reverseddue to heat (the temperature in the operating environment), resulting instorage errors.

Compared to an existing MRAM, the storage element 3 (STT-MRAM) of thepresent storage apparatus is advantageous for scaling, that is, it ispossible to reduce the volume. When volume is reduced, if othercharacteristics remain the same, there is a tendency for a drop inthermal stability.

Since the volume of each storage element 3 becomes significantly smalleras the capacity of STT-MRAM is raised, ensuring thermal stability is animportant issue.

For this reason, thermal stability is an extremely importantcharacteristic for the storage elements 3 in an STT-MRAM, and it isnecessary to use a design where thermal stability is ensured even whenvolume is reduced.

2. Overview of Storage Element According to the Embodiment

Next, an overview of the configuration of the storage element 3according to the present embodiment will be described with reference toFIG. 4.

As shown in FIG. 4, the storage element 3 has the pinned magnetizationlayer (also referred to as the “reference layer”) 12 whose direction ofmagnetization M12 is pinned, the intermediate layer (non-magnetic layer:tunnel insulating layer) 13, the storage layer (free magnetizationlayer) 14 whose direction of magnetization M14 is variable, and a gaplayer 15 laminated in that order on a base layer 11.

The storage layer 14 has magnetization M14 that is perpendicular to thefilm surface and whose direction of magnetization changes correspondingto information.

The pinned magnetization layer 12 has magnetization M12 that isperpendicular to the film layer and serves as a standard for informationstored on the storage layer 14. The direction of magnetization M12 ofthe pinned magnetization layer 12 is pinned by high coercivity or thelike.

The intermediate layer 13 is a non-magnetic material and is providedbetween the storage layer 14 and the pinned magnetization layer 12.

By injecting electrons that are spin polarized in the laminatingdirection of the layered construction including the storage layer 14,the intermediate layer 13, and the pinned magnetization layer 12, thedirection of magnetization of the storage layer 14 is changed, therebyrecording information in the storage layer 14.

Next, spin torque magnetization reversal will be described in brief.

Electrons have two types of spin angular momentum. Assume that suchtypes are defined here as “upward” and “downward”. In a non-magneticmaterial, both types are equal in number, while inside a ferromagneticmaterial, there is a difference in the number of the two types. Considera case where electrons are caused to move from the pinned magnetizationlayer 12 to the storage layer 14 in a state where the respectivemagnetic moments in the pinned magnetization layer 12 and the storagelayer 14 that are two layers of ferromagnetic material that construct anSTT-MRAM are in opposite directions (i.e., are antiparallel).

The pinned magnetization layer 12 is a pinned magnetic layer where thedirection of the magnetic moment is pinned due to high coercivity.

Electrons that pass through the pinned magnetization layer 12 arespin-polarized, that is, a difference is produced between the respectivenumbers of upward and downward types. If the thickness of theintermediate layer 13 that is a non-magnetic layer is made sufficientlythin, the electrons will reach the other magnetic material, that is, thestorage layer 14, before the spin polarization due to passing throughthe pinned magnetization layer 12 is moderated and the unpolarized state(where the numbers of upward and downward types are equal) in a normalnon-magnetic material is reached.

Since the sign of spin polarization is opposite in the storage layer 14,to reduce the system energy, some of the electrons are reversed, thatis, the direction of spin angular momentum is changed. At this time,since it is necessary for the total angular momentum of the system to bepreserved, a reaction equivalent to the total of the change in angularmomentum caused by the electrons whose direction has changed is alsoapplied to the magnetic moment of the storage layer 14.

If the current, that is, the number of electrons that pass through perunit time, is low, since the total number of electrons whose directionchanges is also low, the change in angular momentum produced in themagnetic moments of the storage layer 14 will also be small. However, ifthe current increases, it is possible to apply a large change in angularmomentum per unit time.

The time variation in angular momentum is torque, and if the torqueexceeds a given threshold, precession of the magnetic moment of thestorage layer 14 starts and, due to the uniaxial anisotropy, themagnetic moment becomes stable at a position rotated by 180 degrees.That is, a reversal occurs from the opposite direction (antiparallel) tothe same direction (parallel).

When the magnetization is in the same direction, if a current flows inthe opposite direction so as to send electrons from the storage layer 14to the pinned magnetization layer 12, this time electrons that were spinreversed on being reflected by the pinned magnetization layer 12 willprovide torque on entering the storage layer 14, making it possible toreverse the magnetic moment to the opposite direction. However, whendoing so, the magnitude of the current necessary to cause reversal islarger than when reversing from the opposite direction to the samedirection.

Although it is difficult to intuitively understand reversal of amagnetic moment from the same direction to the opposite direction,consider that the magnetic moment of the pinned magnetization layer 12is not reversed due to the pinned magnetization layer 12 being pinned,and therefore the storage layer 14 is reversed to preserve the angularmomentum of the entire system.

In this way, the recording of 0/1 is carried out by causing a currentthat corresponds to the respective polarities and has a magnitude equalto a threshold or higher to flow in a direction from the pinnedmagnetization layer 12 to the storage layer 14 or in the oppositedirection.

Meanwhile, the reading of information is carried out using amagnetoresistance effect in the same way as with existing MRAM. That is,in the same way as recording described above, a current is caused toflow in the direction perpendicular to the film surfaces. A phenomenonwhereby the magnetoresistance exhibited by the element changes accordingto whether the magnetic moment of the storage layer 14 is in the samedirection as, or the opposite direction to, the magnetic moment of thepinned magnetization layer 12 is used.

The material used as the intermediate layer 13 between the pinnedmagnetization layer 12 and the storage layer 14 may be a metal or may bean insulator. However, there are cases where an insulator is used as theintermediate layer to obtain a higher read signal (or rate of change ofresistance) and to enable recording with a smaller current. Such anelement is referred to as a magnetic tunnel junction (MTJ).

However, when the direction of magnetization of a magnetic layer isreversed by spin torque magnetization reversal, a threshold Ic of thenecessary current differs according to whether the axis of easymagnetization of the magnetic layer is the in-plane direction or theperpendicular direction.

If the reversal current of an in-plane magnetization type STT-MRAM isexpressed as “Ic_para”,parallel→antiparallel: Ic_para=(A×alpha×Ms×V/g(0)/P)(Hk+2piMs)antiparallel→parallel: Ic_para=−(A×alpha×Ms×V/g(pi)/P)(Hk+2piMs)

Meanwhile, if the reversal current of a perpendicular magnetization typeSTT-MRAM is expressed as “Ic_perp”,parallel→antiparallel: Ic_perp=(A×alpha×Ms×V/g(0)/P)(Hk−4piMs)antiparallel→parallel: Ic_perp=−(A×alpha×Ms×V/g(pi)/P)(Hk−4piMs)

where A is a constant, alpha is a damping constant, Ms is saturationmagnetization, V is element volume, g(0)P, g(pi)P are coefficientscorresponding to the efficiency with which spin torque is transmitted tothe other magnetic layer when the magnetism is parallel or antiparallel,and Hk is magnetic anisotropy (see NPL 3).

In the above equations, by comparing (Hk−4 piMs) for a perpendicularmagnetization type and (Hk+2 piMs) for an in-plane magnetization type,it can be understood that the perpendicular magnetization type is suitedto reduction of the recording current.

Note that when expressed using the relationship with delta that is theindex of thermal stability, described later, the reversal current Ic isexpressed by Equation 1 below.

$\begin{matrix}{\left\lbrack {{Math}.\mspace{14mu} 1} \right\rbrack\mspace{526mu}} & \; \\{{Ic} = {\left( \frac{4\;{ek}_{B}T}{\hslash} \right)\left( \frac{\alpha\;\Delta}{\eta} \right)}} & \left( {{Equation}\mspace{14mu} 1} \right)\end{matrix}$

where e is the charge of an electron, eta is the spin injectionefficiency, h with a bar is the conversion Planck's constant, alpha isthe damping constant, k_(B) is the Boltzmann's constant, and T istemperature.

Here, to enable use as a memory, it is necessary to hold informationwritten in the storage layer 14. The ability to hold information isdetermined from the value of the index delta (=KV/k_(B)T) of thermalstability. Delta is expressed by Equation 2 below.

$\begin{matrix}{\left\lbrack {{Math}.\mspace{14mu} 2} \right\rbrack\mspace{526mu}} & \; \\{\Delta = {\frac{KV}{k_{B}T} = \frac{MsVHk}{2k_{B}T}}} & \left( {{Equation}\mspace{14mu} 2} \right)\end{matrix}$

Here, K is the anisotropic energy, Hk is the effective anisotropicmagnetic field, k_(B) is the Boltzmann's constant, T is temperature, Msis the saturation magnetization, and V is the volume of the storagelayer.

The effective anisotropic magnetic field Hk is affected by magneticshape anisotropy, induced magnetic anisotropy, crystal magneticanisotropy, and the like, and if a coherent rotation model with a singledomain is assumed, is equal to the coercivity.

In many cases the index delta of thermal stability delta and the currentthreshold Ic are in a trade-off relationship. This means that tomaintain the memory characteristics, favorably setting both values isoften problematic.

In reality, for a circular TMR element where the thickness of thestorage layer 14 is around 2 nm and a flat pattern has a diameter ofaround 100 nm for example, the threshold for the current that changesthe magnetization of the storage layer 14 is around one hundred toseveral hundred micro amps.

Conversely, in a normal MRAM where magnetization is reversed by acurrent magnetic field, a write current of several milliamps or largeris necessary.

Accordingly, since the threshold of the write current is sufficientlysmall as described above for an STT-MRAM, this is also effective inreducing the power consumption of an integrated circuit.

Also, since wiring for generating a current magnetic field that wasnecessary with a normal MRAM is unnecessary, this is also advantageousin terms of integration density compared to a normal MRAM.

Here, if spin torque magnetization reversal is carried out, since acurrent is directly applied to the storage element 3 to carry out awrite (recording) of information, a memory cell is configured byconnecting the storage element 3 to a selection transistor so as toselect memory cells where a write is to be carried out.

In this case, the current flowing in the storage element 3 is limited bythe magnitude of the current capable of flowing in the selectiontransistor (that is, the saturation current of the selectiontransistor).

It is desirable to use perpendicular magnetization as described above toreduce the recording current. Since a perpendicular magnetization filmis normally also capable of having higher magnetic anisotropy than anin-plane magnetization film, this is also preferable in maintaining ahigh value for delta described above.

Although there are various types of magnetic material with perpendicularanisotropy, such as rare earth-transition metal alloys (like TbCoFe),metal multilayer films (like a Co/Pd multilayer film), ordered alloys(like FePt), and use of interface anisotropy between an oxide and themagnetic metal (like Co/MgO), since rare earth-transition metal alloyslose their perpendicular magnetic anisotropy on diffusing andcrystallizing due to heat, such alloys are not preferable as an STT-MRAMmaterial. It is also known that metal multilayer films diffuse due toheat, causing deterioration in the perpendicular magnetic anisotropy,and since such perpendicular magnetic anisotropy is expressed by aface-centered cubic (111) orientation, it is difficult to realize the(001) orientation required for MgO and/or a high polarization layer ofFe, CoFe, CoFeB or the like disposed adjacent to the MgO. An L10 orderedalloy is stable at high temperature and exhibits perpendicular magneticanisotropy with a (001) orientation, which means that the above problemdoes not occur, but it is necessary to order the atoms either by heatingto a sufficiently high temperature of 500 degrees Celsius or aboveduring manufacturing or by carrying out a heat treatment at a hightemperature of 500 degrees Celsius or above after manufacturing, whichhas the risk of causing undesired diffusion in other parts of thelaminated film, such as the tunnel barrier, and increasing interfaceroughness.

Conversely, a material that uses interface magnetic anisotropy, that is,a material where a Co type or Fe type material is laminated on MgO thatis a tunnel barrier is not susceptible to any of the above problems andfor that reason is promising as a storage layer material of an STT-MRAM.

Meanwhile, it is desirable to use a perpendicular magnetization magneticmaterial with interface magnetic anisotropy in the pinned magnetizationlayer 12. In particular, to provide a large read signal, a materialwhere a magnetic material including Co or Fe is laminated below MgO thatis a tunnel barrier is desirable.

In the present embodiment, the storage layer 14 is a CoFeB perpendicularmagnetization film.

In addition, in consideration to the saturation current value of theselection transistor, the intermediate layer 13 between the storagelayer 14 and the pinned magnetization layer 12 is configured as amagnetic tunnel junction (MTJ) element using a tunnel insulating layermade up of an insulator.

By configuring a magnetic tunnel junction (MTJ) element using a tunnelinsulating layer, compared to a case where a giant magnetoresistanceeffect (GMR) element is configured using a non-magnetic conductivelayer, it is possible to increase the rate of change inmagnetoresistance (MR ratio) and possible to increase the read signalstrength.

In particular, by using magnesium oxide (MgO) as the material of theintermediate layer 13 as the tunnel insulating layer, it is possible toincrease the rate of change in magnetoresistance (MR ratio).

The efficiency of spin transfer normally depends on the MR ratio, andthe higher the MR ratio, the higher the efficiency of spin transfer,making it possible to reduce the magnetization reversal current density.

Accordingly, by using the storage layer 14 described above at the sametime as using magnesium oxide as the material of the tunnel insulatinglayer, it is possible to reduce a write threshold current that uses spintorque magnetization reversal, and therefore possible to carry out awrite (recording) of information with a small current. It is alsopossible to increase the read signal strength.

By doing so, it is possible to maintain the MR ratio (TMR ratio) and toreduce the write threshold current that uses spin torque magnetizationreversal, which makes it possible to carry out a write (recording) ofinformation with a small current. It is also possible to increase theread signal strength.

If the tunnel insulating layer is formed by a magnesium oxide (MgO) filmin this way, it is more desirable to crystallize the MgO and to keep thecrystal orientation in the (001) direction.

Note that in the present embodiment, aside from a configuration wherethe intermediate layer 13 between the storage layer 14 and the pinnedmagnetization layer 12 is made from magnesium oxide as describedearlier, it is also possible to use a configuration using variousinsulators, dielectrics, and semiconductors such as aluminum oxide,aluminum nitride, SiO₂, Bi₂O₃, MgF₂, CaF, SrTiO₂, AlLaO₃, and Al—N—O.

From the viewpoint of obtaining the current density necessary to reversethe direction of magnetization of the storage layer 14 using spin torquemagnetization reversal, it is desirable to control the areal resistanceof the tunnel insulating layer to around several tens of ohm-squaremicrometers or less.

Also, to set the areal resistance of a tunnel insulating layer made ofan MgO film in the range indicated above, it is desirable to set thethickness of the MgO film at 1.5 nm or below.

In the storage element 3 according to the present embodiment, the caplayer 15 is disposed adjacent to the storage layer 14.

Here, in the storage element 3, although it would be conceivable to usea single layer construction as the construction of the pinnedmagnetization layer 12, it is effective to use a laminated ferri-pinnedconstruction composed of two or more ferromagnetic layers and anon-magnetic layer. By using a laminated ferri-pinned construction asthe pinned magnetization layer 12, it is possible to easily cancel outasymmetry in thermal stability with respect to the information writedirection, and to improve stability with respect to spin torque.

For this reason, in the present embodiment, it is assumed that thepinned magnetization layer 12 is a laminated ferri-pinned construction.That is, the laminated ferri-pinned construction is made up of at leasttwo ferromagnetic layers and a non-magnetic layer.

To improve thermal stability, the characteristic necessary for thepinned magnetization layer 12 is that the laminated ferri couplingstrength is high when the magnetic layers used in the configuration arethe same.

As a result of extensive research by the present inventors, it wasestablished that to increase the laminated ferri coupling strength ofthe pinned magnetization layer 12 in a configuration where aperpendicular magnetic anisotropy material that serves as the source ofinterface magnetic anisotropy is disposed below a tunnel barrierinsulating layer, it is important to increase the magnetic anisotropyenergy of the at least two magnetic films that construct the pinnedmagnetization layer 12, and in particular to use, in a magnetic layerthat does not contact the tunnel barrier insulating layer, an alloy or alaminated construction that uses at least one type of a Pt group metalelement with large anisotropic energy and a ferromagnetic 3d transitionmetal element as a ferromagnetic element out of 3d transition metalelements. At such time, it was discovered that by setting the atomicconcentration of the Pt group metal element lower than the ferromagnetic3d transition metal element, the laminated ferri coupling strength isincreased.

For the above reason, in the storage element 3 according to the presentembodiment, the pinned magnetization layer 12 is configured as describedbelow.

That is, it is assumed that the pinned magnetization layer 12 accordingto the present embodiment has a laminated ferri-pinned construction madeup of at least two ferromagnetic layers and a non-magnetic layer, themagnetic material that contacts the recording layer in the pinnedmagnetization layer is composed of a CoFeB magnetic layer, the magneticmaterial that does not contact the insulating layer in the pinnedmagnetization layer is composed of an alloy or a laminated structureusing at least one type of each of a Pt group metal element and aferromagnetic 3d transition metal element that is a ferromagneticelement out of 3d transition metal elements, and the atomicconcentration of the Pt group metal element is lower than theferromagnetic 3d transition metal element.

By using this configuration, it is possible to increase theferromagnetic coupling strength of the pinned magnetization layer 12 andto further improve thermal stability (i.e., the ability to holdinformation). By improving the terminal stability, it is possible tofurther miniaturize the storage element 3 and to promote increasedstorage capacity of a storage apparatus.

Also, by improving the thermal stability, it is possible to suppressoperation errors and to obtain a sufficient operating margin for thestorage element 3, thereby making it possible for the storage element 3to operate stably.

Accordingly, it is possible to realize a storage apparatus that operatesstably and has high reliability.

With the storage element 3 according to the present embodiment, sincethe storage layer 14 is a perpendicular magnetization film, it ispossible to reduce the write current that is necessary to reverse thedirection of magnetization M14 of the storage layer 14.

By reducing the write current in this way, it is possible to reducepower consumption when carrying out a write in the storage element 3.

Here, as shown in FIG. 4, it is possible to manufacture the storageelements 3 according to the present embodiment by first consecutivelyforming the base layer 11 to the metal cap layer 15 inside a vacuumdevice and then forming a pattern of the storage elements 3 bymachining, such as etching.

Accordingly, when manufacturing the storage apparatus, there is theadvantage that it is possible to use a typical semiconductor MOSformation process. That is, the storage apparatus according to thepresent embodiment can be used as general-purpose memory.

Note that in the storage element 3 according to the present embodiment,it is also possible to add non-magnetic elements to the storage layer14.

By adding different types of elements, effects such as improved heatresistance by preventing diffusion, an increased magnetoresistanceeffect, and an improvement in dielectric breakdown voltage thataccompanies smoothing are obtained. As the material of the addedelements, it is possible to use B, C, N, O, F, Li, Mg, Si, P, Ti, V, Cr,Mn, Ni, Cu, Ge, Nb, Ru, Rh, Pd, Ag, Ta, Ir, Pt, Au, Zr, Hf, W, Mo, Re,and Os, or alloys and oxides of the same.

As the storage layer 14, it is also possible to directly laminateanother ferromagnetic layer of a different composition. Alternatively,it is also possible to laminate a ferromagnetic layer and a softmagnetic layer or to laminate a plurality of ferromagnetic layers withsoft magnetic layers or non-magnetic layers in between. The effects ofthe present disclosure are still achieved even when laminating iscarried out in this way.

In particular, when a configuration is used where a plurality offerromagnetic layers are laminated with non-magnetic layers in between,since it is possible to adjust the intensity of the interactions betweenthe ferromagnetic layers, an effect is obtained whereby it is possibleto suppress the magnetization reversal current from becoming large. Insuch case, it is possible to use Ru, Os, Re, Ir, Au, Ag, Cu, Al, Bi, Si,B, C, Cr, Ta, Pd, Pt, Zr, Hf, W, Mo, and Nb or an alloy of the same asthe material of the non-magnetic layer(s).

It is desirable for the respective thicknesses of the pinnedmagnetization layer 12 and the storage layer 14 to be in a range of 0.5nm to 30 nm.

It is desirable for the dimensions of the storage element 3 to bereduced so as to enable easy reversal of the direction of magnetizationof the storage layer 14 with a small current.

As one example, it is desirable for the area of the storage element 3 tobe 0.01 square micrometers or below.

As the remaining configuration of the storage element 3, it is possibleto use the known configuration of an existing storage element thatrecords information according to spin torque magnetization reversal.

As one example, it is possible to use Co, CoFe, CoFeB, or the like asthe material of the ferromagnetic layer constructing the pinnedmagnetization layer 12 of the laminated ferri-pinned construction. Also,as the material of the non-magnetic layer, it is possible to use Ru, Re,Ir, Os, or the like.

Magnetic materials such as FeMn alloy, PtMn alloy, PtCrMn alloy, NiMnalloy, IrMn alloy, NiO, and Fe₂O₃ can be given as examples of thematerial of an antiferromagnetic layer.

It is also possible to add a non-magnetic element such as Ag, Cu, Au,Al, Si, Bi, Ta, B, C, O, N, Pd, Pt, Zr, Ta, Hf, Ir, W, Mo, and Nb tosuch magnetic materials to adjust the magnetic characteristics and/or toadjust various other properties such as crystalline structure,crystallinity, and stability as a substance.

The film configuration (layer construction) of the storage element 3 maybe any configuration where the storage layer 14 is disposed below thepinned magnetization layer 12.

3. Specific Examples and Experimental Results Experiment 1

Here, samples were fabricated for the storage element 3 according to thepresent embodiment and the magnetic characteristics were investigated.

Note that although as shown in FIG. 1, an actual storage apparatusincludes semiconductor circuits for switching and the like in additionto the storage elements 3, investigations were carried out here using awafer on which only a CoPt perpendicular magnetization film was formedto investigate the magnetic characteristics of the perpendicularmagnetization film of the pinned magnetization layer 12.

For such samples, a thermally-oxidized film with a thickness of 300 nmwas formed on a silicon substrate with a thickness of 0.725 mm and thelaminated structure shown in FIG. 5 was then formed on top.

More specifically

base layer 11: laminated film composed of 10 nm-thick film of Ta and 25nm-thick film of Ru

perpendicular magnetization film in pinned magnetization layer 12: 2nm-thick CoPt film

Note that in this experiment, as shown in the drawings, a laminated filmof 3 nm of Ru and 3 nm of Ta was formed as a protective layer on theperpendicular magnetization film in the pinned magnetization layer 12.

Also, in this experiment, the composition of the CoPt film was varied ina range where Pt=0 to 52 atomic %. Note that the expression Pt=0 atomic% refers to a laminated structure of Pt:5 nm/Co:2 nm. When Pt:5 nm/Co:2nm is used in this way, since Co and Pt are not mixed, Pt is treated asa base, resulting in Pt=0 atomic %.

After all of the films described above have been deposited, the samplesof this experiment were subjected to heat treatment at 350 degreesCelsius.

In this experiment, the magnetic characteristics were measured using avibrating sample magnetometer (VSM).

For the various samples produced by varying the CoPt composition asdescribed above, the Kut (anisotropic energy multiplied by CoPtlaminated thickness) calculated from the VSM measurement results isshown in FIG. 6. Here, Kut was found by measuring an externally appliedmagnetic field (Hk) necessary to saturate magnetization in an in-planedirection for the film surface of the sample and the saturationmagnetization Ms in a direction perpendicular to the film surface.

As shown in FIG. 6, Kut in a range where the Pt atomic % is 0 to 38% issubstantially constant at 0.6 erg/cc or has a tendency to slightly fall,but when the Pt atomic % exceeds 40%, a comparatively large fall in Kutof around 0.1 erg/cc is observed. From such results, it is possible toconfirm that a large change in the Kut of CoPt occurs when the Pt atomic% is close to 40%. It was also established that the Kut of a samplewhere the Pt atomic % exceeds 50% is 0.3 erg/cc or below, which is alarge drop to half or less of a sample where the Pt atomic % is 0 to38%.

From such results, it is possible to state that it is desirable for theatomic concentration of the Pt group metal element that constructs theperpendicular magnetization film to be 40% or below to achieve stabilityand a sufficient laminated ferri coupling strength for the pinnedmagnetization layer.

Experiment 2

Next, samples were fabricated and characteristics were investigated forthe entire structure of the storage element 3 according to the presentembodiment.

In Experiment 2, investigations were carried out here using a wafer onwhich only the storage elements 3 were formed to investigate themagnetization reversal characteristics of the pinned magnetization layer12.

More specifically, a thermally-oxidized film with a thickness of 300 nmwas formed on a silicon substrate with a thickness of 0.725 mm and thestorage element 3 was then formed on top using the construction shown inFIG. 7.

As shown in FIG. 7, the materials and thicknesses of the respectivelayers that construct the pinned magnetization layer 12 were selected asindicated below.

Pinned magnetization layer 12: laminated film of CoPt:2 nm/Ru:0.8nm/CoFeB:2 nm

Also, in this experiment, the composition of the CoPt was varied in arange where Pt=0 to 52 atomic %. Note that the expression Pt=0 atomic %in this case also refers to a laminated structure of Pt:5 nm/Co:2 nm.

The materials and thicknesses of the respective layers aside from thepinned magnetization layer 12 were selected as indicated below.

base layer 11: laminated film of 10 nm-thick film of Ta and 25 nm-thickfilm of Ru

intermediate layer (tunnel insulating layer) 13: 0.9 nm-thick magnesiumoxide film

storage layer 14: CoFeB: 1.5 nm

cap film 15: laminated film of Ta:3 nm/Ru:3 nm/Ta:3 nm

After all of the films described above have been deposited, the samplesof this experiment were subjected to heat treatment at 350 degrees.

The composition of the CoFeB alloy of the pinned magnetization layer 12and the storage layer 14 was set at CoFe80% (Co30%-Fe70%)-B20% (allatomic %).

The intermediate layer 13 composed of a magnesium oxide (MgO) film wasdeposited using RF magnetron sputtering and the other films weredeposited using a DC magnetron sputtering.

In this experiment, the magneto-optic Kerr effect was used to measurethe magnetic characteristics.

Hcoupling found from the results of measuring the Kerr effect will nowbe described with reference to FIG. 8 for respective samples produced byvarying the CoPt composition as described above.

In FIG. 8, FIG. 8A expresses Hcoupling for the respective samples. Here,as illustrated in FIG. 8B, Hcoupling is defined at a magnetic field (3kOe) where the laminated ferri-coupling is broken.

As shown in FIG. 8A, Hcoupling exhibits the same tendency regarding thedependence on Pt atomic % as Kut shown in FIG. 6, with there being achange point in the magnitude of Hcoupling when Pt atomic % is close to40%. In more detail, although a certain level of Hcoupling is maintaineduntil the Pt atomic % is 42%, Hcoupling is substantially lost forsamples where Pt atomic % is 52%. Accordingly, from the results of thisexperiment, it can be said that to obtain a certain level of Hcoupling,it is necessary for the Pt atomic % to be at least lower than the atomic% of Co and more desirably if the Pt atomic % is lower than 40%, it ispossible to realize a large Hcoupling, that is, a more stable laminatedferri coupling strength.

In reality, when an element with a diameter of 50 nm phi is processedand the electrical characteristics were investigated, although a changein resistance of 10% or more was obtained when the areal resistance isin a vicinity of 10 ohm-square micrometers for samples with any CoPtcomposition, for samples with a Pt atomic % of 52%, the MR curveexpected for a laminated ferri-type MTJ was not obtained and instead theresults were close to the MR curve expected for a coercivitydifference-type MTJ.

Also, in this experiment, as shown in Table 1 below, for six sampleswhere the Pt atomic % in a storage element 3 with the construction shownin FIG. 7 was respectively set at 0% (Specific Example 1), 19.5%(Specific Example 2), 28% (Specific Example 3), 32.5% (Specific Example4), 37% (Specific Example 5), and 42% (Comparative Example 1), the MR-Hwaveform type, the drop in TMR when a 2.0 kOe external magnetic fieldwas applied, the index delta of thermal stability, and the reversalcurrent density Jc0 (MA/cm²) were found.

Note that delta and Jc0 were found by measuring the pulse widthdependence of the storage layer magnetization reversal current.

TABLE 1 MR-H DROP Pt WAVE- IN TMR atomic FORM @H = Jc0 % Type 2.0k0e Δ(MA/cm²) SPECIFIC EXAMPLE 1 0 1 0 42 3.3 SPECIFIC EXAMPLE 2 19.5 1 0 423.3 SPECIFIC EXAMPLE 3 28 1 0 42 3.3 SPECIFIC EXAMPLE 4 32.5 2 5 42 3.4SPECIFIC EXAMPLE 5 37 3 10 42 3.45 COMPARATIVE 42 4 100 39 4.6 EXAMPLE 1

Here, the “MR-H waveform type” in Table 1 will be described withreference to FIG. 9.

In FIG. 9, FIG. 9A shows Type 1, Type 2, and Type 3 as MR-H waveformtypes. In FIG. 9B, Type 4 is shown as a MR-H waveform type.

A MR-H curve is generated by measuring change in resistance whileapplying an external magnetic field to a storage element sample, andMR(TMR) is found by dividing (resistance in a high resistancestate−resistance in a low resistance state) by the resistance in the lowresistance state and multiplying the result by 100.

In the MR-H curve as Type 1 shown in FIG. 9A, a perfectly squarewaveform is maintained when the applied external magnetic field is in arange of plus or minus 3.0 kOe, and is therefore an ideal MR-H curve.

On the other hand, with both Type 2 and Type 3, a fall in squareness,that is, a drop in MR, is observed when the applied external magneticfield is in the vicinity of plus 2.0 kOe. In more precise terms,although deterioration in the laminated ferri coupling strength isobserved in the vicinity of 2.0 kOe for both Type 2 and Type 3, since MRmaintains a value that is significantly larger than zero when 3.0 kOe isapplied, the laminated ferri coupling strength is still comparativelyhigh. As shown in the drawing, the extent of the drop in MR when 2.0 to3.0 kOe is applied is larger for Type 3 than for Type 2, and thereforeType 2 has a more favorable laminated ferri coupling strength than Type3.

Unlike Types 1 to 3, with Type 4 shown in FIG. 9B, MR drops to zero whenthe applied magnetic field is in the vicinity of 2.0 kOe. Thiscorresponds to the CoFeB in the pinned magnetization layer 12 beingcompletely reversed in the vicinity of 2.0 kOe. That is, thiscorresponds to breakdown of the laminated ferri-pinned construction ofthe pinned magnetization layer 12.

As can be understood from such results, since the laminated ferricoupling is weak, Type 4 is not desirable from the viewpoints ofmaintaining thermal stability and reducing power consumption.

From the results in Table 1 given above, it can be understood that thetype of MR-H waveform changes if the Pt atomic concentration of CoPt isvaried. More specifically, it can be understood that the laminated ferricoupling strength is strong in compositions with little Pt and becomesweaker as Pt increases.

From the results in Table 1, it can be understood that the boundarybetween Type 3 and Type 4 for the MR-H waveform is present between Ptatomic % of 37% (Specific Example 5) and 42% (Comparative Example 1),and that a large difference in the drop in TMR of between 10 and 100also appears. From such results also, it can be understood that it isdesirable for the Pt atomic concentration to be 40 atomic % or below asdescribed earlier from the viewpoint of maintaining the laminated ferricoupling strength.

Also, from the results in Table 1, it can be confirmed that a largedifference in delta and Jc0 characteristics was not observed when Pt isin a range of 0 to 37 atomic % as the Specific Example 1 to SpecificExample 5 (i.e., for Type 1 to Type 3 samples). Conversely, for thesamples as Comparative Example 1 where Pt=42 atomic % and a Type 4waveform was obtained, delta slightly falls and there was an increase ofaround fifty percent in Jc0. From such results, it can be understoodthat there is large correlation between the MR-H waveform (inparticular, the laminated ferri coupling strength) and the spininjection magnetization reversal characteristics. The cause of thedifferences in spin injection magnetization reversal characteristics isbelieved to be as follows. When a spin-polarized current is injectedinto the storage element, if the laminated ferri coupling strength isweak, the magnetization will fluctuate not only in the storage layer 14but also in the pinned magnetization layer 12.

Note that although detailed description of the results is omitted, itwas confirmed that completely the same tendencies as the experimentsdescribed above were obtained even when the perpendicular magnetizationfilm in the pinned magnetization layer 12 that does not contact theintermediate layer 13 (tunnel barrier insulating layer) is formed asCoPd, FePt, and FePd, that is, a combination of a ferromagnetic 3dtransition metal element that is a ferromagnetic element out of 3dtransition metal elements and a Pt group metal element.

Note that aside from Co and Fe, Ni can also be given as an example ofthe ferromagnetic 3d transition metal element mentioned above.

Experiment 3

Although experiment results have been described for the pinnedmagnetization layer 12 with a CoPt/Ru/CoFeB configuration, samples werealso produced and tested for a laminated construction ofCoPt/Ru/CoPt/CoFeB which is intended to further increase the laminatedferri coupling strength.

FIG. 10 shows the layered construction of the storage element samplesused in Experiment 3. As shown in the drawing, such samples are the sameas the sample shown in FIG. 7 in that the base layer 11, the pinnedmagnetization layer 12, the intermediate layer 13, the storage layer 14,and the metal cap layer 15 are disposed in that order from the bottom.

In this experiment, samples where the layered construction of the pinnedmagnetization layer 12 was set at CoPt:2 nm, Ru:0.8 nm, CoPt:xnm,CoFeB:(2-x)nm were produced and the characteristics of such samples wereinvestigated.

Note that in this experiment also, investigations were carried out usinga wafer on which only the storage element 3 with the construction shownin FIG. 10 was formed.

More specifically, a thermally-oxidized film with a thickness of 300 nmwas formed on a silicon substrate with a thickness of 0.725 mm and thestorage element 3 with the configuration shown in FIG. 10 was thenformed on top.

In this experiment, the film configurations aside from the pinnedmagnetization layer 12 (i.e., the film configurations of the base layer11, the intermediate layer 13, the storage layer 14, and the cap layer15) are the same as in Experiment 2 described earlier.

In this experiment, the composition of CoPt was fixed at Pt=42 atomic %and samples were respectively produced where x(nm) given above was x=0,x=0.5, and x=1.0.

Here, the samples where x=0.5 were set as “Specific Example 6” and thesamples where x=1.0 were set as “Specific Example 7”. Since sampleswhere x=0 are the same as Comparative Example 1 described earlier, suchsamples are indicated in this experiment also as “Comparative Example1”.

Note that in this case also, Pt=0 atomic % refers to a laminatedconstruction of Pt:5 nm/Co:2 nm.

For the samples of Specific Example 6, Specific Example 7, andComparative Example 1 described above, the MR-H waveform type, the dropin TMR when a 2.0 kOe external magnetic field was applied, the indexdelta of thermal stability, and the reversal current density Jc0(MA/cm²) were found in the same way as in Table 1 earlier.

The results are shown in Table 2 below.

TABLE 2 MR-H DROP WAVEFORM IN TMR Jc0 X Type @H = 2.0k0e Δ (MA/cm²)COMPARATIVE 0 4 100 39 4.6 EXAMPLE 1 SPECIFIC 0.5 1 0 42 3.0 EXAMPLE 6SPECIFIC 1.0 1 0 42 3.2 EXAMPLE 7

From the results in Table 2, with the samples of Embodiment 6 andEmbodiment 7 with the CoPt/Ru/CoPt/CoFeB construction, it can beunderstood that regardless of Pt being set at 42 atomic %, the MR-Hwaveform type is Type 1 and the drop in TMR when an external magneticfield of 2.0 kOe is applied is 0.

From such results, it can be understood that by using aCoPt/Ru/CoPt/CoFeB construction (that is, a construction where both theupper surface and the lower surface of the non-magnetic layer in thepinned magnetization layer 12 contact ferromagnetic materials that useat least one type of each of a Pt group metal element and aferromagnetic 3d transition metal element), laminated ferri couplingstrength is ensured even with a Pt atomic concentration for which thelaminated ferri coupling strength was not ensured for a CoPt/Ru/CoFeBconstruction (Comparative Example 1). In other words, by using aconstruction where both the upper surface and a lower surface of anon-magnetic layer in the pinned magnetization layer 12 that has aCoPt/Ru/CoPt/CoFeB construction contact magnetic materials that use atleast one type of each of a Pt group metal element and a ferromagnetic3d transition metal element, laminated ferri coupling strength isimproved compared to a case where a construction where only the lowersurface of the non-magnetic layer in the pinned magnetization layer 12that has a CoPt/Ru/CoFeB construction contacts a magnetic material thatuses at least one type of each of a Pt group metal element and aferromagnetic 3d transition metal element.

The improvement in laminated ferri coupling strength when using aCoPt/Ru/CoPt/CoFeB construction in this way is due to the presence of aconfiguration called a CoPt/CoFeB/MgO tunnel barrier) within suchconstruction. That is, although CoFeB is perpendicularly magnetizedusing only interface magnetic anisotropy in the case of theCoPt/Ru/CoFeB construction used in Experiment 2 earlier, by using aCoPt/CoFeB configuration, the laminated ferri coupling strength itselfbecomes stronger from the ability to use perpendicular magneticanisotropy based on the crystal magnetic anisotropy of CoPt.

By introducing a material (Pt) with a large damping constant in themagnetic layer immediately below the MgO barrier, there are the meritsof an increase in stability against spin injection and an increase inspin torque resistance as the pinned magnetization layer 12.

From the results in Table 2 above, from the relationship between deltaand Jc0, it is possible to confirm that an effect of a reduction in Jc0is obtained due to the addition to the pinned magnetization layer 12 ofPt whose damping constant is high.

Here, even with the CoPt/Ru/CoPt/CoFeB construction, it is necessary tomake the atomic % of Pt in the CoPt lower than the Co, and morepreferably by setting the Pt atomic % at 40% or below, a largerHcoupling and a more stable laminated ferri coupling strength arerealized in the same way as with a CoPt/Ru/CoFeB construction.

4. Modifications

Although embodiments of the present disclosure have been describedabove, the present disclosure is not limited to the specific examplesdescribed above.

As one example, the construction of the storage element according to theembodiments of the present disclosure has been described as amagnetoresistance effect element configuration such as TMR element, suchmagnetoresistance effect element as a TMR element is not limited to thestorage apparatus described above and can also be applied to variouselectronic appliances, electrical appliances, and the like, such as amagnetic head, a hard disk drive equipped with such magnetic head, andan integrated circuit chip, as well as to a personal computer, a mobileterminal, a mobile phone, and a magnetic sensor appliance.

As one example FIG. 12A and FIG. 12B show an example where amagnetoresistance effect element 101 using the construction of thestorage element 3 described above is applied to a composite magnetichead 100. Note that FIG. 12A is a perspective view of the compositemagnetic head 100 that has been partially cut away to show the internalconstruction and FIG. 12B is a cross-sectional view of the compositemagnetic head 100.

The composite magnetic head 100 is a magnetic head used in a hard diskapparatus or the like and has a magnetoresistance effect-type magnetichead according to an embodiment of the present disclosure formed on asubstrate 122 and has an inductive magnetic head formed so as to belaminated on the magnetoresistance effect-type magnetic head. Here, themagnetoresistance effect-type magnetic head operates as a reproductionhead and the inductive magnetic head operates as a recording head. Thatis, the composite magnetic head 100 is configured by combining areproduction head and a recording head.

The magnetoresistance effect-type magnetic head provided in thecomposite magnetic head 100 is a so-called “shield-type MR head” andincludes a first magnetic shield 125 formed on the substrate 122 with aninsulating layer 123 in between, the magnetoresistance effect-typemagnetic element 101 formed on the first magnetic shield 125 with theinsulating layer 123 in between, and a second magnetic shield 127 formedon the magnetoresistance effect-type magnetic element 101 with theinsulating layer 123 in between. The insulating layer 123 is made of aninsulating material such as Al₂O₃ or SiO₂.

The first magnetic shield 125 magnetically shields the lower layer sideof the magnetoresistance effect-type magnetic element 101 and iscomposed of a soft magnetic material such as Ni—Fe. Themagnetoresistance effect-type magnetic element 101 is formed on thefirst magnetic shield 125 with the insulating layer 123 in between.

The magnetoresistance effect-type magnetic element 101 functions in themagnetoresistance effect-type magnetic head as a magnetism sensitivedevice that detects a magnetic signal from a magnetic recording medium.The magnetoresistance effect-type magnetic element 101 has the same filmconfiguration (layered construction) as the storage element 3 describedearlier.

The magnetoresistance effect-type magnetic element 101 is formed in asubstantially rectangular shape with one side surface exposed to thefacing surface of a magnetic recording medium. Bias layers 128, 129 aredisposed at both ends of the magnetoresistance effect-type magneticelement 101. Connection terminals 130, 131 that are connected to thebias layers 128, 129 are also formed. A sense current is supplied to themagnetoresistance effect-type magnetic element 101 via the connectionterminals 130, 131.

In addition, the second magnetic shield 127 is provided on the biaslayers 128, 129 with the insulating layer 123 in between.

The inductive magnetic head formed so as to be laminated on themagnetoresistance effect-type magnetic head as described above includesa magnetic core, which is composed of the second magnetic shield 127 andan upper core 132, and a thin-film coil 133 formed so as to be woundaround such magnetic core.

The upper core 132 forms a closed magnetic circuit together with thesecond magnetic shield 127, forms the magnetic core of an inductivemagnetic head, and is made of a soft magnetic material such as Ni—Fe.Here, front end portions of the second magnetic shield 127 and the uppercore 132 are exposed to the facing surface of a magnetic recordingmedium and at rear end portions thereof, the second magnetic shield 127and the upper core 132 contact each other. Here, the front end portionsof the second magnetic shield 127 and the upper core 132 are formed sothat a specific gap g is provided between the second magnetic shield 127and the upper core 132 at the magnetic recording medium facing surface.

That is, in the composite magnetic head 100, the second magnetic shield127 not only magnetically shields the upper layer side of amagnetoresistance effect element 126 but also serves as the magneticcore of the inductive magnetic head, so that the magnetic core of theinductive magnetic head is constructed by the second magnetic shield 127and the upper core 132. The gap g forms the recording magnetic gap ofthe inductive magnetic head.

The thin-film coil 133 embedded in the insulating layer 123 is formed onthe second magnetic shield 127. Here, the thin-film coil 133 is formedso as to be wound around a magnetic core made up of the second magneticshield 127 and the upper core 132. Although not illustrated, both endportions of the thin-film coil 133 are exposed to the outside andterminals formed at both ends of the thin-film coil 133 form externalconnection terminals of the inductive magnetic head. That is, whenrecording a magnetic signal on a magnetic recording medium, a recordingcurrent is supplied to the thin-film coil 133 from such externalconnection terminals.

As described above, the laminated structure as a storage elementaccording to the embodiments of the present disclosure is capable ofbeing used as a reproduction head for a magnetic recording medium, thatis, as a magnetism sensitive element that detects a magnetic signal froma magnetic recording medium.

By applying the laminated structure as a storage element according tothe embodiments of the present disclosure to a magnetic head, it ispossible to realize a highly reliable magnetic head with superiorthermal stability.

Although the construction of the storage element 3 composed of the baselayer 11, the pinned magnetization layer 12, the intermediate layer 13,the storage layer 14, and the cap layer 15 has been described as anexample, as the storage element (and magnetic head) according to anembodiment of the present disclosure, it is also possible to use aconstruction, as a storage element 3#, where the pinned magnetizationlayer 12 is divided and disposed on both the bottom and top of thestorage layer 14 as in the base layer 11-lower pinned magnetizationlayer 12L-lower intermediate layer 13L-storage layer 14-upperintermediate layer 13U-upper pinned magnetization layer 12U-cap layer 15construction shown in FIG. 11.

The direction of magnetization M12 of the lower pinned magnetizationlayer 12L and the direction of magnetization of the upper pinnedmagnetization layer 12U are both shown in FIG. 11, with the directionsof the magnetizations M12L and M12U being opposite in the illustratedexample.

Also in such case, the lower intermediate layer 13L and the upperintermediate layer 13U are composed of an oxide film of MgO or the likein the same way as the intermediate layer 13.

Even with a configuration where the pinned magnetization layer 12 isdivided and disposed on the top and bottom in this way, by using, forthe upper and lower pinned magnetization layers 12, the sameconstruction as the pinned magnetization layer 12 described earlier,that is “a laminated ferri-pinned construction made up of at least twoferromagnetic layers and a non-magnetic layer, where the magneticmaterial in the pinned magnetization layer that contacts the insulatinglayer is configured using a CoFeB magnetic layer, the magnetic materialin the pinned magnetization layer that does not contact the insulatinglayer is an alloy or a laminated construction using at least one type ofeach of a Pt group metal element and a ferromagnetic 3d transitionelement, and the atomic concentration of the Pt group metal element islower than the ferromagnetic 3d transition element”, the effect ofimproving the thermal stability can be obtained in the same way.

Also, although a case where the CoFeB composition of the storage layer14 and the pinned magnetization layer 12 is the same has been describedas an example in the above explanation, such composition may havevarious other configurations within a range that does not depart fromthe scope of the present disclosure.

Although the CoFeB in the pinned magnetization layer 12 is a singlelayer in the above explanation, it is possible to add elements andoxides in a range where there is no significant drop in the couplingmagnetic field.

Here, Ta, Hf, Nb, Zr, Cr, Ti, V, and W can be given as examples ofelements to be added and MgO, AlO, and SiO2 can be given as examples ofoxides.

The base layer 11 and the cap layer 15 may be a single material or maybe a laminated construction of a plurality of materials.

The present disclosure can also be applied to a so-called “top-laminatedferri-type STT-MRAM” and in such case, if the CoPt composition is in therange of the present disclosure, the effect of improving the thermalstability can be obtained in the same way.

Additionally, the present technology may also be configured as below.

(1) A storage element including:

a layered construction including

a storage layer that has magnetization perpendicular to a surface of thestorage layer and whose direction of magnetization is changedcorresponding to information,

a pinned magnetization layer that has magnetization perpendicular to asurface of the pinned magnetization layer and serves as a standard forinformation stored in the storage layer, and

an insulating layer that is composed of a non-magnetic material and isprovided between the storage layer and the pinned magnetization layer,

wherein recording of information in the storage layer is carried out bychanging the direction of magnetization of the storage layer byinjecting spin-polarized electrons in a laminating direction of thelayered construction,

wherein the pinned magnetization layer has a laminated ferri-pinnedconstruction composed of at least two ferromagnetic layers and anon-magnetic layer,

wherein a magnetic material in the pinned magnetization layer thatcontacts the insulating layer is configured using a CoFeB magneticlayer, and

wherein a magnetic material in the pinned magnetization layer that doesnot contact the insulating layer is one of an alloy and a laminatedstructure using at least one type of each of a Pt group metal elementand a ferromagnetic 3d transition metal element that is a ferromagneticelement out of 3d transition metal elements, and an atomic concentrationof the Pt group metal element is lower than an atomic concentration ofthe ferromagnetic 3d transition metal element.

(2) The storage element according to (1),

wherein in the magnetic material that uses the at least one type of eachof the Pt group metal element and the ferromagnetic 3d transition metalelement, the atomic concentration of the Pt group metal element is 40%or below.

(3) The storage element according to (1) or (2),

wherein at least one of Pt and Pd is used as the Pt group metal element.

(4) The storage element according to any one of (1) to (3),

wherein at least one of Co and Fe is used as the ferromagnetic 3dtransition metal element.

(5) The storage element according to any one of (1) to (4),

wherein both an upper surface and a lower surface of the non-magneticlayer in the pinned magnetization layer contact the magnetic materialthat uses the at least one type of each of the Pt group metal elementand the ferromagnetic 3d transition metal element.

REFERENCE SIGNS LIST

-   -   1 gate electrode    -   2 element separating layer    -   3, 3# storage element    -   4 contact layer    -   6 bit line    -   7 source region    -   8 drain region    -   9 wire    -   10 semiconductor substrate    -   11 base layer    -   12 pinned magnetization layer    -   12L lower pinned magnetization layer    -   12U upper pinned magnetization layer    -   13 intermediate layer    -   13L lower intermediate layer    -   13U upper intermediate layer    -   14 storage layer    -   15 cap layer

The invention claimed is:
 1. A storage element comprising: a layerstructure including a first layer having a first magnetization state; asecond layer having a second magnetization state; and an intermediatelayer provided between the first layer and the second layer, wherein thesecond layer includes at least a first magnetic layer, a second magneticlayer, and a non-magnetic layer, and the non-magnetic layer is providedbetween the first magnetic layer and the second magnetic layer, whereinthe first magnetic layer contacts the intermediate layer, and whereinthe first layer contacts the intermediate layer and has a magnetizationsubstantially perpendicular to a surface of the first layer.
 2. Thestorage element according to claim 1, wherein the first magnetic layerincludes Co, Fe, and B.
 3. The storage element according to claim 1,wherein the second magnetization state is a fixed magnetization state.4. The storage element according to claim 1, wherein the firstmagnetization state is configured to be changed by a current.
 5. Thestorage element according to claim 1, wherein the intermediate layerincludes one or more of magnesium oxide, aluminum oxide, aluminumnitride, SiO₂, Bi₂O₃, MgF₂, CaF, SrTiO₂, AlLaO₃, and AlNO.
 6. Thestorage element according to claim 1, wherein a thickness of theintermediate layer is no more than 1.5 nm.
 7. The storage elementaccording to claim 1, wherein the second magnetic layer does not contactthe intermediate layer, wherein the second magnetic layer includes oneor both of a Pt group metal element and a ferromagnetic 3d transitionmetal element, and wherein an atomic concentration of the Pt group metalelement is lower than an atomic concentration of the ferromagnetic 3dtransition metal element.
 8. The storage element according to claim 7,wherein the second magnetic layer includes CoPt.
 9. The storage elementaccording to claim 7, wherein the atomic concentration of the Pt groupmetal element is no more than 40%.
 10. The storage element according toclaim 7, wherein the Pt group metal element includes at least one orboth of Pt and Pd.
 11. The storage element according to claim 7, whereinthe second magnetic layer includes an alloy or a laminated structure.12. A memory comprising: a storage element; and a first wire and asecond wire that intersects the first wire; wherein the storage elementincludes a layer structure including a first layer having a firstmagnetization state; a second layer having a second magnetization state;and an intermediate layer provided between the first layer and thesecond layer, wherein the second layer includes at least a firstmagnetic layer, a second magnetic layer, and a non-magnetic layer, andthe non-magnetic layer is provided between the first magnetic layer andthe second magnetic layer, wherein the first magnetic layer contacts theintermediate layer, and wherein the first layer contacts theintermediate layer and has a magnetization substantially perpendicularto a surface of the first layer.
 13. The memory according to claim 12,wherein the first magnetic layer includes Co, Fe, and B.
 14. The memoryaccording to claim 12, wherein the second magnetization state is a fixedmagnetization state.
 15. The memory according to claim 12, wherein thefirst magnetization state is configured to be changed by a current. 16.The memory according to claim 12, wherein the intermediate layerincludes one or more of magnesium oxide, aluminum oxide, aluminumnitride, SiO₂, Bi₂O₃, MgF₂, CaF, SrTiO₂, AlLaO₃, and AlNO.
 17. Thememory according to claim 12, wherein a thickness of the intermediatelayer is no more than 1.5 nm.
 18. The memory according to claim 12,wherein the second magnetic layer does not contact the intermediatelayer, wherein the second magnetic layer includes one or both of a Ptgroup metal element and a ferromagnetic 3d transition metal element, andwherein an atomic concentration of the Pt group metal element is lowerthan an atomic concentration of the ferromagnetic 3d transition metalelement.
 19. The storage element according to claim 1, furthercomprising a third layer, wherein the third layer includes at least oneof tantalum and ruthenium.
 20. The storage element according to claim19, wherein the intermediate layer is a magnesium oxide layer.
 21. Thestorage element according to claim 20, wherein the first magnetic layerincludes Co, Fe, and B.
 22. The storage element according to claim 20,wherein the first magnetic layer includes a first CoPt material, thenon-magnetic layer includes ruthenium and the second magnetic layerincludes a second CoPt material in this order.
 23. The storage elementaccording to claim 22, wherein the second layer further includes Co, Fe,and B.
 24. The storage element according to claim 21, wherein thenon-magnetic layer includes ruthenium.
 25. The storage element accordingto claim 1, wherein the non-magnetic layer has a thickness less thaneach of the first magnetic layer and second magnetic layer.
 26. Thestorage element according to claim 25, wherein the first layer has athickness less than the second layer.
 27. The storage element accordingto claim 26, wherein the intermediate layer has a thickness less thanthe first layer.
 28. The memory according to claim 12, furthercomprising a third layer, wherein the third layer includes at least oneof tantalum and ruthenium.
 29. The memory according to claim 28, whereinthe intermediate layer is a magnesium oxide layer.
 30. The memoryaccording to claim 29, wherein the first magnetic layer includes Co, Fe,and B.
 31. The memory according to claim 29, wherein the first magneticlayer includes a first CoPt material, the non-magnetic layer includesruthenium and the second magnetic layer includes a second CoPt materialin this order.
 32. The memory according to claim 31, wherein the secondlayer further includes Co, Fe, and B.
 33. The memory according to claim30, wherein the non-magnetic layer includes ruthenium.
 34. The memoryaccording to claim 12, wherein the non-magnetic layer has a thicknessless than each of the first magnetic layer and second magnetic layer.35. The memory according to claim 34, wherein the first layer has athickness less than the second layer.
 36. The storage element accordingto claim 35, wherein the intermediate layer has a thickness less thanthe first layer.